IP

Our R&D team, led by Prof. R. Popovic, invented some of the most advanced magnetic field sensors:

  • The first integrated 3D Hall Probe
  • The most sensitive Vertical Hall Devices
  • The best Angular Position Sensors
  • The most successful Compass Chip
  • Novel Current Sensors

We can help you develop your own advanced products based on these inventions and the related know-how. Or we can grant you a license on some of our patents or designs.

EP2265962 Magnetic field sensor measuring a direction of a magnetic field in a plane and current sensor. Preferred application: Accurate and fast Integrated Angular Position Sensors.

EP13174935 Current transducer for measuring an electrical current (granted: EU, JP). Preferred application: High-resolution Current Transducers.

EP14182975.4 Current transducer for measuring an electrical current flowing through a cable (granted: USA). Preferred application: High-resolution Current Transducers.

EP14176835.8 Vertical Hall Device (granted: USA, CN, JP; EU). Application: High-resolution CMOS integrated vertical Hall device.

EP16157316.7 Angle sensor, magnetic field sensor and method of measuring an angle of a magnetic field;(granted: US, EU, CN, JP, KR). Preferred Application: Accurate and fast Integrated Angular Position Sensors and Small Angle Detectors.

EP16196608.0 Calibration tool for calibrating a magnetic sensor (granted: CH, EU, CN, US, JP)

PCT/IB2019/059785 – Magnetic sensor with low noise and high bandwidth (granted EU, US; pending: CN, KR)

PCT/EP2022/072389 – Method and apparatus for calibrating a magnetic sensor and/or a calibrating magnet

PCT/IB2023/061331 – Magnetic field sensor system with a temperature response-compensated output signal and method for the temperature response-compensation of an output signal of a magnetic field sensor system

CMOS Integrated Horizontal Hall Device Cell, featuring high magnetic sensitivity and low 1/f noise, is compatible with the spinning current technique.

CMOS Integrated Horizontal Hall Device Cell

CMOS Integrated Vertical Hall Device Cell (patent pending), featuring high magnetic sensitivity and low 1/f noise, is compatible with the spinning current technique.

CMOS Integrated Vertical Hall Device Cell (patent pending)

CMOS Hall Spinning Current Integrated Circuit Cell, containing a horizontal and/or vertical Hall device, digital circuits and switches for the Hall spinning current biasing and signal readout

CMOS Hall Spinning Current Integrated Circuit Cell